21 February 2011 Photoexcited carrier relaxation dynamics of InN films and nanocolumns
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Abstract
The relaxation dynamics of photo-excited carriers of indium nitride (InN) films and nanocolumns were examined using degenerate pump-probe measurements at room temperature. We measured two InN films and nanocolumns with different background carrier densities, and performed numerical calculations incorporating band-filling and bandgap-renormalization effects, as well as LO phonon scattering. We found that the intrinsic relaxation properties of InN can be understood by considering the density of states and electron occupation number of the conduction band. It was also revealed that the decay dynamics of InN are not affected by the carrier recombination time under the appropriate conditions. In addition, we examined the differences in carrier relaxation properties between films and nanocolumns.
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M. Hashimoto, M. Hashimoto, K. Fukunaga, K. Fukunaga, H. Kunugita, H. Kunugita, J. Kamimura, J. Kamimura, A. Kikuchi, A. Kikuchi, K. Kishino, K. Kishino, K. Ema, K. Ema, } "Photoexcited carrier relaxation dynamics of InN films and nanocolumns", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793712 (21 February 2011); doi: 10.1117/12.873357; https://doi.org/10.1117/12.873357
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