21 February 2011 Optical studies on InxGa1-xN quantum disks
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Abstract
Time integrated and time resolved microphotoluminescence studies have been performed on InxGa1-xN quantum disks embedded in GaN nanocolumns. The results are analysed in context of current theories regarding an inhomogeneous strain distribution in the disk, which is theorised to generate lateral charge separation in the disks by strain induced band bending, an inhomogeneous polarization field distribution, and Fermi surface pinning. It is concluded that no lateral separation of carriers occurs in the quantum discs under investigation.
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Mark J. Holmes, Mark J. Holmes, Young S. Park, Young S. Park, Xu Wang, Xu Wang, Christopher C. S. Chan, Christopher C. S. Chan, Anas F. Jarjour, Anas F. Jarjour, Jun Luo, Jun Luo, Jamie H. Warner, Jamie H. Warner, H. A. R. El-Ella, H. A. R. El-Ella, R. A. Oliver, R. A. Oliver, Robert A. Taylor, Robert A. Taylor, } "Optical studies on InxGa1-xN quantum disks", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793713 (21 February 2011); doi: 10.1117/12.877149; https://doi.org/10.1117/12.877149
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