23 February 2011 Optical frequency conductance model of terahertz/infrared emission and detection in semiconductors
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Proceedings Volume 7938, Terahertz Technology and Applications IV; 79380B (2011) https://doi.org/10.1117/12.878883
Event: SPIE OPTO, 2011, San Francisco, California, United States
The optical frequency conductance is derived for quantum wells and quantum dots, and the optical frequency conductivity of bulk narrow-gap semiconductors is revisited. The teraHertz (THz) and infrared (IR) response of these semiconductor structures, in both free-space and guided-wave geometries, is described in a simple manner within the optical frequency conductance formalism. Familiar concepts form the microwave domain, including transmission lines and impedance matching, are extended into the THz and IR domains. We show that the fine structure constant of quantum electrodynamics sets the natural scale for the optical conductance of semiconductor structures, from which rules of thumb and physical limits to THz/IR gain and absorption can be derived. The optical conductance formalism can be applied to MCT photodetectors, quantum well IR photodetectors, quantum dot IR photodetectors, and quantum cascade lasers.
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Thomas Szkopek, Thomas Szkopek, Elizabeth Ledwosinska, Elizabeth Ledwosinska, } "Optical frequency conductance model of terahertz/infrared emission and detection in semiconductors", Proc. SPIE 7938, Terahertz Technology and Applications IV, 79380B (23 February 2011); doi: 10.1117/12.878883; https://doi.org/10.1117/12.878883

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