24 February 2011 Nb5N6 bolometer operated at room temperature for detecting at 100 GHz
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Proceedings Volume 7938, Terahertz Technology and Applications IV; 79380F (2011); doi: 10.1117/12.874578
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Onto a double layer, which is made of a Si substrate ( ρ> 1000 Ω·cm ) and a SiO2 layer 100 nm thick on top of it, a Nb5N6 thin film microbridge is deposited and integrated with an aluminum bow-tie planar antenna. With a SiO2 air-bridge further fabricated underneath the microbridge and operated at room temperature, such a combination behaves very well as a bolometer for detecting signals at 100 GHz, thanks to a temperature coefficient of resistance (TCR) as high as -0.7% K-1 of the Nb5N6 thin film. According to our estimations, the best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical noise equivalent power (NEP) is 6.9x10-11 W/Hz1/2 for a modulation frequency at 300 Hz and 9.8x10-12 W/Hz1/2 for a modulation frequency above 10 kHz respectively, which are better than those of commercial products (such as Golay cell and Schottky diode detectors). A quasi-optical receiver based on such a bolometer is constructed and measured.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Kang, X. H. Lu, J. Chen, C. H. Cao, W. W. Xu, B. B. Jin, P. H. Wu, Q. J. Yao, S. C. Shi, "Nb5N6 bolometer operated at room temperature for detecting at 100 GHz", Proc. SPIE 7938, Terahertz Technology and Applications IV, 79380F (24 February 2011); doi: 10.1117/12.874578; https://doi.org/10.1117/12.874578
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KEYWORDS
Bolometers

Modulation

Thin films

Resistance

Antennas

Receivers

Silicon

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