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3 March 2011 Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392B (2011) https://doi.org/10.1117/12.874127
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We present our approach to measure the profile of nonuniformly bent GaN epi-wafers grown on sapphire substrates. By using a laser displacement sensor, the position of the epi-wafer is accurately measured and mapped. From the measured profile data, analysis of stress distributions over the nonuniformly bent wafer is performed by using a theoretical model. We show the result of theoretical analysis of how the stress tensors distribute over a wafer. The estimated stress tensors are related with optical properties such as photoluminescence of the wafer.
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Yuseong Jang, Dong-Hyun Jang, Jong-In Shim, and Dong-Soo Shin "Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392B (3 March 2011); https://doi.org/10.1117/12.874127
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