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2 March 2011 Growth of bulk GaN crystal by Na flux method
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793902 (2011) https://doi.org/10.1117/12.877114
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
In this paper, we reported the recent advances in the growth of GaN crystals on GaN templates and spontaneously nucleated GaN seeds by Na flux method. In the growth on GaN templates, it was clarified that the growth mode could be controlled by changing the flux composition. Based on the changes in the growth mode under different flux compositions, a growth sequence that is effective for the growth of thick GaN substrates with a low dislocation density was proposed. In the growth on pyramidal GaN seeds, we investigated the dependence of the growth rate, crystallinity and the growth habit on the flux composition. Results showed that a low Ga composition was preferred to grow high-crystallinity prismatic GaN crystals with a high growth rate. When a spontaneously nucleated GaN seed was used, a bulk GaN crystal with a hexagonal pillar consisting of six m-facets, and its length and diameter were 10 mm and 8 mm, respectively, was obtained. Furthermore, we found that the addition of Ca and Li to Ga-Na melt improved transparency of GaN crystals grown on pyramidal GaN seeds.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Imade, N. Miyoshi, M. Yoshimura, Y. Kitaoka, T. Sasaki, and Y. Mori "Growth of bulk GaN crystal by Na flux method", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793902 (2 March 2011); https://doi.org/10.1117/12.877114
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