2 March 2011 Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793905 (2011) https://doi.org/10.1117/12.875002
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.
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Hongping Zhao, Hongping Zhao, Jing Zhang, Jing Zhang, Guangyu Liu, Guangyu Liu, Takahiro Toma, Takahiro Toma, Jonathan D. Poplawsky, Jonathan D. Poplawsky, Volkmar Dierolf, Volkmar Dierolf, Nelson Tansu, Nelson Tansu, } "Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793905 (2 March 2011); doi: 10.1117/12.875002; https://doi.org/10.1117/12.875002
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