3 March 2011 Recent developments in AlGaN-based laser diodes for short ultraviolet region
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79390V (2011) https://doi.org/10.1117/12.871742
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We present a review of nitride laser diodes lasing at short ultraviolet wavelengths. The room temperature operations of the AlGaN based laser diodes under pulsed current mode are presented. The optical and temperature characteristics as well as the carrier recombination of the devices are also investigated.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harumasa Yoshida, Harumasa Yoshida, Masakazu Kuwabara, Masakazu Kuwabara, Yoji Yamashita, Yoji Yamashita, Kazuya Uchiyama, Kazuya Uchiyama, Hirofumi Kan, Hirofumi Kan, "Recent developments in AlGaN-based laser diodes for short ultraviolet region", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390V (3 March 2011); doi: 10.1117/12.871742; https://doi.org/10.1117/12.871742
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