Abstract
The monolithic alternating current light emitting diode (ACLED) has been revealed for several years and was regarded
as a potential device for solid state lighting. In this study, we will discuss the characteristics, development status, future
challenges, and ITRI's development strategy about ACLED, especially focusing on the development progress of the
monolithic GaN-based Schottky barrier diodes integrated ACLED (SBD-ACLED). The SBD-ACLED design can not
only improve the chip area utilization ratio but also provide much higher reverse breakdown voltage by integrating four
SBDs with the micro-LEDs array in a single chip, which was regarded as a good on-chip ACLED design. According to
the experimental results, higher chip efficiency can be reached through SBD-ACLED design since the chip area
utilization ratio was increased. Since the principle and the operation condition of ACLED is quite different from those of
the typical DCLED, critical issues for ACLED like the current droops, the flicker phenomenon, the safety regulations,
the measurement standards and the power fluctuation have been studied for getting a practical and reliable ACLED
design. Besides, the "AC LED application and research alliance" (AARA) lead by ITRI in Taiwan for the
commercialization works of ACLED has also been introduced.
