3 March 2011 InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793918 (2011) https://doi.org/10.1117/12.875188
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We describe recent work on InGaN lasers and AlGaN UV LEDs at the Palo Alto Research Center (PARC). The presentation includes results from InGaN laser diodes in which the usual epitaxial upper cladding layer is replaced with an evaporated or sputtered non-epitaxial material, such as indium tin oxide, silver, or a silver-palladium-copper alloy [1, 2]. Non-epitaxial cladding layers offer several advantages to long wavelength InGaN laser diodes, such as eliminating the need to expose vulnerable InGaN active layers to the high temperatures required for growing conventional p-AlGaN cladding layers subsequent to the active layer growth. The presentation also discusses our recent results on AlGaN UV LEDs. UV LEDs with 300 micron square geometries operating at λ = 325 nm exhibit output powers of 13 mW with differential quantum efficiencies of 0.054 W/A measured under wafer-level, unpackaged condition with no heat sink. LEDs operating at λ = 290 nm under similar test conditions display output powers of 1.6 mW for large-area 300 μm X 1 mm devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Chua, Christopher Chua, Zhihong Yang, Zhihong Yang, Clifford Knollenberg, Clifford Knollenberg, Mark Teepe, Mark Teepe, Bowen Cheng, Bowen Cheng, Andre Strittmatter, Andre Strittmatter, David Bour, David Bour, Noble M. Johnson, Noble M. Johnson, } "InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793918 (3 March 2011); doi: 10.1117/12.875188; https://doi.org/10.1117/12.875188
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