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3 March 2011 Properties of TCO anodes deposited by APCVD and their applications to OLEDs
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793919 (2011)
Event: SPIE OPTO, 2011, San Francisco, California, United States
Doped ZnO is one of the materials currently being considered in industrial applications as a possible replacement for ITO as a transparent conducting oxide. The properties of doped ZnO anodes prepared at Arkema Inc. are analyzed in 3D using high-throughput mapping tools. The 2D resistivities of the coatings measured by 4-point probe compare well with the resistivity values calculated from the spectroscopic ellipsometer measurements. It was found that the dependence of effective mass of doped ZnO on Hall-electron concentration influences optically-calculated mobilities and electron concentrations. To study the variation of the film properties along z-axis, the films are polished using mechanical planarization technique. The electrical and crystallographic depth profiles for these films are studied by differential Hall-effect and grazing-angle x-ray spectroscopy. The electron mobility increases continuously from the glass-film interface (12 cm2/Vs) to the ZnO film surface (19 cm2/Vs). The electron concentration depth profile has bell-like dependence with a maximum at 1.55 x 1021 cm-3. In addition to the increasing grain size, the texture coefficients for the (002) reflection decrease and (103) reflection increase towards the air-film interface. Examples of the applications of the doped ZnO anodes in the OLED structures suggest improvement of external quantum efficiency with introduction of an Al2O3 undercoat.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Y. Korotkov, P. Ricou, L. Fang, J. Coffey, G. Silverman, M. Ruske, H. Schwab, A. B. Padmaperuma, and D. J. Gaspar "Properties of TCO anodes deposited by APCVD and their applications to OLEDs", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793919 (3 March 2011);


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