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3 March 2011 Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391J (2011) https://doi.org/10.1117/12.876366
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n+-GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the VOC and JSC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Ciao Yang, Jinn-Kong Sheu, Min-Shun Huang, Shang-Ju Tu, Feng-Wen Huang, Kuo-Hua Chang, Ming-Lun Lee, and Wei-Chih Lai "Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391J (3 March 2011); https://doi.org/10.1117/12.876366
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