9 March 2011 1/f Noise in Schottky diodes
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391S (2011) https://doi.org/10.1117/12.876254
Event: SPIE OPTO, 2011, San Francisco, California, United States
The physics and the engineering formulas of 1/f noise in ErAs-based all-epitaxial, GaN-based, and other types of Schottky diodes are presented in a way related to the general pn junction quantum 1/f noise formulas developed by the author and van der Ziel earlier, but with inclusion of the image force contribution of an electron at the metal-semiconductor interface. On this base the phase noise introduced by mixers constructed with the ErAs Schottky diodes was also studied and can now be calculated analytically with the Quantum 1/f effect formulas.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter H. Handel, Peter H. Handel, Hadis Morkoç, Hadis Morkoç, } "1/f Noise in Schottky diodes", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391S (9 March 2011); doi: 10.1117/12.876254; https://doi.org/10.1117/12.876254


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