18 February 2011 Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391W (2011) https://doi.org/10.1117/12.875861
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Non-polar (1-100 ) and semipolar (1-101)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-101) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-101) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-100 ) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-101) -oriented GaN are encouraging.
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N. Izyumskaya, N. Izyumskaya, S. J. Liu, S. J. Liu, S. Okur, S. Okur, M. Wu, M. Wu, V. Avrutin, V. Avrutin, Ü. Özgür, Ü. Özgür, S. Metzner, S. Metzner, F. Bertram, F. Bertram, J. Christen, J. Christen, L. Zhou, L. Zhou, D. J. Smith, D. J. Smith, H. Morkoç, H. Morkoç, } "Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391W (18 February 2011); doi: 10.1117/12.875861; https://doi.org/10.1117/12.875861
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