3 March 2011 Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391Z (2011) https://doi.org/10.1117/12.876845
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Indium-tin-oxide (ITO)/Ni/AgCu/Pt reflectors for high-performance GaN-based vertical light-emitting diodes (VLEDs) were investigated. The ITO layer was first annealed at 650 °C in air to make an Ohmic contact and then the Ni/AgCu/Pt reflectors were deposited and subsequently annealed at 400 °C in air to improve their reflectance and mechanical adhesion with the ITO layer. It was shown that the reflectance of the ITO/Ni/AgCu/Pt reflectors at 460nm was slightly increased from 82 to 87% after second annealing. Based on the secondary ion mass spectrometry depth profiles, this improvement was attributed to the formation of a transparent Ni-oxide and the existence of Cu atoms near ITO/AgCu/Pt interface regions suppressing the inter and out-diffusion of Ag. The VLEDs fabricated with the ITO/Ni/AgCu/Pt reflectors showed an approximately 4.4% higher output power and much better current-voltage characteristics than those with the Ag-based reflectors.
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Tak Jeong, Tak Jeong, Seung Whan Kim, Seung Whan Kim, Jong Hyeob Baek, Jong Hyeob Baek, } "Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391Z (3 March 2011); doi: 10.1117/12.876845; https://doi.org/10.1117/12.876845
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