3 March 2011 Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793920 (2011) https://doi.org/10.1117/12.876870
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.
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Haiyong Gao, Jaesoong Lee, Xianfeng Ni, Jacob Leach, Ümit Özgür, Hadis Morkoç, "Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793920 (3 March 2011); doi: 10.1117/12.876870; https://doi.org/10.1117/12.876870
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