3 March 2011 High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793927 (2011) https://doi.org/10.1117/12.873170
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We present modal gain measurements in Ga(NAsP) heterostructures pseudomorphically grown on silicon substrate. Using the variable stripe length method we analyze the modal gain performance of an unprocessed single quantum well sample for different excitation densities. We obtain high modal gain values up to 55 cm-1 at room temperature. These values are comparable to those of common high quality laser material. This demonstrates the high optical quality of the new dilute nitride material Ga(NAsP) and underlines its candidacy for electrically pumped lasing on silicon substrate.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Koukourakis, N. Koukourakis, D. A. Funke, D. A. Funke, N. C. Gerhardt, N. C. Gerhardt, M. R. Hofmann, M. R. Hofmann, S. Liebich, S. Liebich, C. Bückers, C. Bückers, S. Zinnkann, S. Zinnkann, M. Zimprich, M. Zimprich, A. Beyer, A. Beyer, S. Chatterjee, S. Chatterjee, S. W. Koch, S. W. Koch, B. Kunert, B. Kunert, K. Volz, K. Volz, W. Stolz, W. Stolz, } "High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793927 (3 March 2011); doi: 10.1117/12.873170; https://doi.org/10.1117/12.873170
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