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3 March 2011 Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392F (2011) https://doi.org/10.1117/12.875692
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Generation-recombination processes in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with HfAlO gate dielectric have been investigated through low-frequency phase-noise. Some devices tested exhibited noise spectra deviating from the well-known 1/ƒγ spectrum. These devices showed broad peaks attributed to generation-recombination (GR) effect in the noise-spectral-density (NSD) vs. frequency plots, which shifted toward higher frequencies at elevated temperatures. The unannealed and annealed MOSHFETs exhibited trap energy values as 0.22 eV and 0.11 eV at drain bias values of 6.3 V and 10 V, respectively. Then, we monitored the effect of source-drain bias on the excess GR noise. The time constant of the traps decreased from 16.7 ms to 2.1 ms as we increased the drain bias,VDS, from 10 V to 18 V for the annealed devices. We also measured the evolution of the GR-like spectrum as a function of VDS in HFETs to investigate the field-assisted emission. The zero-field trap energy is extracted as 0.71 eV from temperature dependence of emission using extrapolation technique to validate the potential barrier lowering (Frenkel-Poole effect) of the traps.
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Cemil Kayis, Jacob H. Leach, C. Y. Zhu, Mo Wu, X. Li, X. Yang, Veena Misra, Peter H. Handel, Ü. Özgür, and H. Morkoç "Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392F (3 March 2011); https://doi.org/10.1117/12.875692
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