3 March 2011 Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392H (2011) https://doi.org/10.1117/12.876356
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
This paper reports a novel selective growth method for growing crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by adding SiO2 stripes in perpendicular to the V-grooves on Si. This method can effectively reduce the thermal stress between GaN and Si substrate so that crack-free (1-101) GaN films as thick as 1 μm is achieved after coalescence even without an AlN interlayer. Cathodoluminescence measurements show the presence of low dislocation density areas, which can be attributed to the bending of dislocations toward to the [1-100] and [11-20] directions during the facet growth.
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Hsien-Yu Lin, Hsien-Yu Lin, Hsueh-Hsing Liu, Hsueh-Hsing Liu, Chen-Zi Liao, Chen-Zi Liao, Jen-Inn Chyi, Jen-Inn Chyi, } "Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392H (3 March 2011); doi: 10.1117/12.876356; https://doi.org/10.1117/12.876356
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