3 March 2011 Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392J (2011) https://doi.org/10.1117/12.877210
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x1020 cm-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10-3 Ω-cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.
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Cheng-Yu Chen, Cheng-Yu Chen, Li-Han Siao, Li-Han Siao, Jen-Inn Chyi, Jen-Inn Chyi, Chih-Kang Chao, Chih-Kang Chao, Chih-Hung Wu, Chih-Hung Wu, } "Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392J (3 March 2011); doi: 10.1117/12.877210; https://doi.org/10.1117/12.877210
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