Paper
22 April 1987 Approaches To Enhancing The Sensitivity Of Direct Coupled Photoacoustic Spectroscopy As Applied To Gaas
Bruce K. Janousek, Richard C. Carscallen
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940902
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Several GaAs-piezoelectric transducer configurations have been characterized to increase the sensitivity of a direct-coupled photoacoustic spectrometer constructed to study the optical properties of GaAs. We have shown that the use of an annular-shaped transducer and the presence of a thin mirror between the GaAs and the transducer decrease spectrometer noise and allow for enhanced sensitivity through the exploitation of transducer resonances. Limitations of this technique for studying semiconductor deep levels are identified and the use of the complex modes of the transducer for studying semiconductor heterostructures is discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce K. Janousek and Richard C. Carscallen "Approaches To Enhancing The Sensitivity Of Direct Coupled Photoacoustic Spectroscopy As Applied To Gaas", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940902
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KEYWORDS
Transducers

Gallium arsenide

Absorption

Semiconductors

Spectroscopy

Photoacoustic spectroscopy

Mirrors

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