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22 April 1987 Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940906
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Electrically active flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits. Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1-2 microns in size. Thus, a defect detection system would need to exhibit both high spatial resolution and contrast at defective sites. Several approaches for defect detection are in use, although no technique appears capable of non-destructively detecting 1 micron defects in silicon, without vacuum, in a timely manner. A pump-probe laser system has been developed to satisfy these requirements.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. E. Carver and J. D. Michalski "Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940906
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