Paper
22 April 1987 Reflected Millimeter Wave Power From Moving Strip Illuminated Semiconductor Panel (RMWPFMSISP)
M. H. Rahnavard, A. Habibzadeh
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940924
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Moving spot illuminated semiconductor panels are used in millimeter wave image convertors. In order to know the performance of this system it is required to know the response of illuminated semiconductor panels. In this paper reflected millimeter power from moving strip illuminated semiconductor panels as a function of scanning velocity, width of the strip, time etc. are studied.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Rahnavard and A. Habibzadeh "Reflected Millimeter Wave Power From Moving Strip Illuminated Semiconductor Panel (RMWPFMSISP)", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940924
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KEYWORDS
Semiconductors

Signal attenuation

Extremely high frequency

Diffusion

Dielectrics

Electrical engineering

Gold

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