14 March 2011 ZnO nanorods for light-emitting diode applications
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Proceedings Volume 7940, Oxide-based Materials and Devices II; 79400B (2011) https://doi.org/10.1117/12.878940
Event: SPIE OPTO, 2011, San Francisco, California, United States
We investigated the influence of the growth method, growth conditions, and post-growth treatments on the ZnO nanorod properties and the performance of heterojunction light emitting diodes (LEDs) based on ZnO nanorods. Due to small lattice mismatch between GaN and ZnO, we will mainly consider p-GaN/n-ZnO nanorod heterojunctions. The influence of p-GaN substrate and the influence of growth method and growth conditions used for ZnO nanorods on the LED performance will be discussed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinyi Chen, Alan M. C. Ng, Ka Kan Wong, Aleksandra B. Djurišić, Fang Fang, Wai Kin Chan, Patrick Wai Keung Fong, Hsian Fei Lui, and Charles Surya "ZnO nanorods for light-emitting diode applications", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400B (14 March 2011); doi: 10.1117/12.878940; https://doi.org/10.1117/12.878940

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