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10 March 2011 Bridging wide bandgap nanowires for ultraviolet light detection
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Proceedings Volume 7940, Oxide-based Materials and Devices II; 79400E (2011) https://doi.org/10.1117/12.874142
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
A single-step bridging method is used to fabricate bridged wide bandgap semiconductor nanowire structures as ultraviolet photodetectors. The nanowires are bridged across self-grown electrodes in a chemical vapor deposition process without resorting to epitaxial growth and photolithography techniques. Depending on the surface depletion properties of the nanowires, two types of bridged nanowire structures are designed. For ZnO nanowires with strong surface depletion effect, a bascule nanobridge structure is adopted. For β-Ga2O3 nanowires with weak surface depletion effect, a direct nanobridge structure is used. The bridged nanowire photodetectors are operated with a few volts and show good spectral selectivity, and high and fast photoresponse.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanbo Li, Miao Zhong, Takero Tokizono, Alexander Paulsen, Meiyong Liao, Yasuo Koide, Ichiro Yamada, and Jean-Jacques Delaunay "Bridging wide bandgap nanowires for ultraviolet light detection", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400E (10 March 2011); https://doi.org/10.1117/12.874142
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