Paper
10 March 2011 Electronic structure, doping, and lattice dynamics of LiGaO2
Adisak Boonchun, Walter R. L. Lambrecht
Author Affiliations +
Proceedings Volume 7940, Oxide-based Materials and Devices II; 79400N (2011) https://doi.org/10.1117/12.879320
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
First-principles calculations are used to study the properties of LiGaO2, a potentially useful opto-electronic material in conjunction with ZnO. Its band structure is evaluated using the quasiparticle self-consistent GW method. The band gap is found to be significantly larger than the reported room temperature absorption onset. Estimates are made of the finite temperature and excitonic corrections. Potential n- and p-type dopants are studied in the local density approximation, using a supercell approach. The lattice dynamical properties are studied using the density functional perturbation method.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adisak Boonchun and Walter R. L. Lambrecht "Electronic structure, doping, and lattice dynamics of LiGaO2", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400N (10 March 2011); https://doi.org/10.1117/12.879320
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Cited by 4 scholarly publications.
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KEYWORDS
Zinc oxide

Gallium

Doping

Lithium

Chemical species

Germanium

Crystals

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