14 March 2011 Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light-emitting diode
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Proceedings Volume 7940, Oxide-based Materials and Devices II; 79400W (2011) https://doi.org/10.1117/12.877322
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterojunction, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1×1017cm-3. Mesa geometry light emitting diodes were fabricated with Au/Ni and Au/Ti Ohmic contacts on top of the p-type and n-type layers, respectively. Strong ultraviolet emission was achieved, which yielded an output power of 457 nW at 140 mA. The drastic enhancement of the output power is attributed to carrier confinement in the good-quality intrinsic layer of the double heterojunction. The spatial distribution of light emission was characterized.
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Sheng Chu, Jianze Zhao, Zheng Zuo, Jieying Kong, Lin Li, Jianlin Liu, "Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light-emitting diode", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400W (14 March 2011); doi: 10.1117/12.877322; https://doi.org/10.1117/12.877322
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