27 January 2011 GaAs-SOI integration as a path to low-cost optical interconnects
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Abstract
We present a concept where GaAs chips with dilute nitride and quantum dot optoelectronics are hybrid integrated on a silicon-on-insulator (SOI) waveguide platform and packaged into low-cost modules using silicon as the packaging material. The approach aims to offer high energy efficiency, low cost and high bandwidth for optical interconnects operating at 1.2-1.3 μm wavelengths. It presents technologies that could bridge the gap between long and short range optical communication, which are presently based on incompatible wavelength ranges and waveguiding technologies (single vs. multimode).
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Timo Aalto, Timo Aalto, Mikko Harjanne, Mikko Harjanne, Markku Kapulainen, Markku Kapulainen, Sami Ylinen, Sami Ylinen, Mircea Guina, Mircea Guina, Kimmo Haring, Kimmo Haring, Janne Puustinen, Janne Puustinen, Vladimir Mikhrin, Vladimir Mikhrin, } "GaAs-SOI integration as a path to low-cost optical interconnects", Proc. SPIE 7941, Integrated Optics: Devices, Materials, and Technologies XV, 79410S (27 January 2011); doi: 10.1117/12.874644; https://doi.org/10.1117/12.874644
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