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18 January 2011 Rigorous characterization of silicon nanowires and nanophotonic devices
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Proceedings Volume 7943, Silicon Photonics VI; 79430H (2011) https://doi.org/10.1117/12.873067
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Rigorous modal solutions of silicon nanowires are presented by using a H-field based finite element formulation. It is shown that beam profiles of a circular nanowire are not circular. It is also shown that most of the optical power in a silicon slot waveguide can be confined in the low-index slot region. It is shown here that dispersion properties can be easily controlled by waveguide design of silicon nanowires, as waveguide dispersion dominates over the material dispersion for such sub-wavelength optical structures. Bending losses of such silicon nanowires are also presented.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. A. Rahman, D. M. H. Leung, K. Namassivayane, T. Koshy, Z. J. Jiang, A. Law, H. Ahmed, and K. T. V. Grattan "Rigorous characterization of silicon nanowires and nanophotonic devices", Proc. SPIE 7943, Silicon Photonics VI, 79430H (18 January 2011); https://doi.org/10.1117/12.873067
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