Mid-infrared silicon photonic devices

Goran Z. Mashanovich; Milan M. Milosevic; Milos Nedeljkovic; Nathan Owens; William R. Headley; Ee Jin Teo; Boqian Xiong; Pengyuan Yang; Youfang Hu

doi:10.1117/12.876060

17 January 2011 Mid-infrared silicon photonic devices

Goran Z. Mashanovich, Milan M. Milosevic, Milos Nedeljkovic, Nathan Owens, William R. Headley, Ee Jin Teo, Boqian Xiong, Pengyuan Yang, Youfang Hu

Author Affiliations +

Proceedings Volume 7943, Silicon Photonics VI; 79430Q (2011) https://doi.org/10.1117/12.876060
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The mid-infrared spectral region is interesting for bio-chemical sensing, environmental monitoring, free space communications, or military applications. Silicon is relatively low-loss from 1.2 to 8 μm and from 24 to 100 μm, and therefore silicon photonic circuits can be used in mid- and far- infrared wavelength ranges. In this paper we investigate several silicon based waveguide structures for mid-infrared wavelength region.

Citation Download Citation

Goran Z. Mashanovich, Milan M. Milosevic, Milos Nedeljkovic, Nathan Owens, William R. Headley, Ee Jin Teo, Boqian Xiong, Pengyuan Yang, and Youfang Hu "Mid-infrared silicon photonic devices", Proc. SPIE 7943, Silicon Photonics VI, 79430Q (17 January 2011); https://doi.org/10.1117/12.876060

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