17 January 2011 Optical near field in silicon photonics
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Proceedings Volume 7943, Silicon Photonics VI; 79430S (2011) https://doi.org/10.1117/12.875235
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Optical devices based on SOI have been fabricated and tested for the last decade by using far field optics. Alternatively, near-field scanning optical microscopes (NSOM) have the ability to reach unique optical resolution by converting the evanescent waves into radiation waves that can be detected by conventional far field optics. Thus, the aim of this paper is to show the most recent capabilities of the NSOM in a guided detection to probe SOI-based structures. By using this simple yet powerful configuration, we can observe the propagation of the light in Si-based devices and thus measure the propagation characteristics of the guided modes.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Salas-Montiel, A. Apuzzo, A. Bruyant, P. Royer, G. Lérondel, and S. Blaize "Optical near field in silicon photonics", Proc. SPIE 7943, Silicon Photonics VI, 79430S (17 January 2011); doi: 10.1117/12.875235; https://doi.org/10.1117/12.875235
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