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A high speed silicon electro-optic modulator is proposed based on a hybrid-lattice mode-gap resonator.
The device surface area is only 10 μm by 4.5 μm and both injection and depletion mode operation have
been studied. Our full 3D optical and electrical numerical result shows the device is capable of a
modulation speed of 238 Gb/s at a 10 dB extinction ratio when it is operated in the depletion mode by
an embedded P+PNN+ diode. More importantly, its energy consumption is ultra-low at 26.6 fJ per bit.
The fabricated hybrid-lattice resonator demonstrates a resonance peak around 1600 nm with quality
factor ~7800, which agrees well with the optical numerical results from 3D FDTD methods. The
dynamic characterization of the device is still in progress. The compact device dimension and ultra-low
energy consumption are favorable to high density photonic integration.
Maoqing Xin,Ching Eng Png, andAaron J. Danner
"A compact depletion mode silicon modulator based on a photonic hybrid-lattice mode-gap resonator", Proc. SPIE 7943, Silicon Photonics VI, 794318 (17 January 2011); https://doi.org/10.1117/12.874101
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Maoqing Xin, Ching Eng Png, Aaron J. Danner, "A compact depletion mode silicon modulator based on a photonic hybrid-lattice mode-gap resonator," Proc. SPIE 7943, Silicon Photonics VI, 794318 (17 January 2011); https://doi.org/10.1117/12.874101