17 January 2011 Self-organized InAs quantum dot tube lasers and integrated optoelectronics on Si
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Proceedings Volume 7943, Silicon Photonics VI; 79431C (2011) https://doi.org/10.1117/12.876172
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We report on the fabrication, characterization and integration of semiconductor microtube lasers on silicon. These microtubes are fabricating using standard photolithography techniques on epitaxially grown strained bilayer films, and show remarkable spectral properties attributable to whispering-gallery-mode type optical resonances. We have demonstrated coherent emission coupled to the optical microcavity modes in both GaAs/InGaAs and InGaAsP microtubes with embedded quantum dots. Furthermore, the GaAs/InGaAs microtubes have shown room temperature, continuous wave lasing. The microtubes can be transferred to any foreign substrate without affecting their optical properties. Work is in progress to couple the tubes with integrated silicon-on-insulator waveguides.
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Zetian Mi, Zetian Mi, Pablo Bianucci, Pablo Bianucci, Feng Li, Feng Li, Zhaobing Tian, Zhaobing Tian, Venkat Veerasubramanian, Venkat Veerasubramanian, Andrew G. Kirk, Andrew G. Kirk, David V. Plant, David V. Plant, Philip J. Poole, Philip J. Poole, } "Self-organized InAs quantum dot tube lasers and integrated optoelectronics on Si", Proc. SPIE 7943, Silicon Photonics VI, 79431C (17 January 2011); doi: 10.1117/12.876172; https://doi.org/10.1117/12.876172
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