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17 January 2011 Variation of optical properties by the crystalline phase transition of polycrystalline silicon
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Proceedings Volume 7943, Silicon Photonics VI; 79431F (2011) https://doi.org/10.1117/12.874435
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.
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Hidenori Iwata, Tomohiro Kita, and Hirohito Yamada "Variation of optical properties by the crystalline phase transition of polycrystalline silicon", Proc. SPIE 7943, Silicon Photonics VI, 79431F (17 January 2011); https://doi.org/10.1117/12.874435
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