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24 January 2011 The progress of QD laser in the near IR wavelength region
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Abstract
Demand on high quality and new contents in optical internet still requires continuous development of advanced optical components in the point of low cost and high performance. The use of quantum dot structure in the active region of semiconductor optical devices have been shown superior high carrier dynamic and temperature less sensitive properties by some research groups. A 1.5μm QD laser on the InP(100) substrate will be demonstrated in detail with the brief review of new achievements of QD optical devices in the near IR wavelength range. Enhanced temperature stability of Fabry-Perot QD laser will be reported. Also, 10Gbps direct modulation speed demonstrated with the moderate side mode suppression in the DFB QD laser. Statistic approach for the reproducible formation of quantum dot in the MOCVD and MBE system also will be introduced
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. K. Oh, J. S. Kim, J. H. Lee, S. U. Hong, C. W. Lee, W. S. Han, and B. S. Choi "The progress of QD laser in the near IR wavelength region", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79450D (24 January 2011); https://doi.org/10.1117/12.875141
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