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24 January 2011 Cubic III-nitrides: potential photonic materials
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Abstract
The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.
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K. Onabe, S. Sanorpim, H. Kato, M. Kakuda, T. Nakamura, K. Nakamura, S. Kuboya, and R. Katayama "Cubic III-nitrides: potential photonic materials", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794517 (24 January 2011); https://doi.org/10.1117/12.865768
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