24 January 2011 III-nitride semiconductors for intersubband devices
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Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Kotsar, Y. Kotsar, H. Machhadani, H. Machhadani, S. Sakr, S. Sakr, P. K. Kandaswamy, P. K. Kandaswamy, M. Tchernycheva, M. Tchernycheva, E. Bellet-Amalric, E. Bellet-Amalric, F. H. Julien, F. H. Julien, E. Monroy, E. Monroy, } "III-nitride semiconductors for intersubband devices", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451D (24 January 2011); doi: 10.1117/12.872893; https://doi.org/10.1117/12.872893

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