24 January 2011 III-nitride semiconductors for intersubband devices
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Abstract
Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.
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Y. Kotsar, Y. Kotsar, H. Machhadani, H. Machhadani, S. Sakr, S. Sakr, P. K. Kandaswamy, P. K. Kandaswamy, M. Tchernycheva, M. Tchernycheva, E. Bellet-Amalric, E. Bellet-Amalric, F. H. Julien, F. H. Julien, E. Monroy, E. Monroy, } "III-nitride semiconductors for intersubband devices", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451D (24 January 2011); doi: 10.1117/12.872893; https://doi.org/10.1117/12.872893
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