24 January 2011 Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer
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Abstract
One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3" GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10-4A/cm2 at 50 mV, resulting in a specific detectivity of 6x1011 cm.Hz1/2/W.
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Binh-Minh Nguyen, Binh-Minh Nguyen, Guanxi Chen, Guanxi Chen, Minh-Anh Hoang, Minh-Anh Hoang, Manijeh Razeghi, Manijeh Razeghi, } "Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451O (24 January 2011); doi: 10.1117/12.879860; https://doi.org/10.1117/12.879860
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