24 January 2011 Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor
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Abstract
Low dark current and high fill factor are two crucial characteristics for the realization of the InAs/GaSb superlattice (SL) technology as third generation focal plane arrays (FPAs). Recent development proved high performance results for the complementary barrier infrared detector (CBIRD) design, and a high-quality etch technique is required to minimize surface leakage currents. We report on a n-CBIRD with 10.3 μm cutoff, exhibiting a responsivity of 1.7 A/W and dark current density of 1×10-5 A/cm2 at 77K under 0.2 V bias, without AR coating and without passivation. Results from four different mesa isolation techniques are compared on single element diodes: chemical wet etch using C4H6O6:H3PO4:H2O2:H2O, BCl3/Ar inductively coupled plasma (ICP), CH4/H2/Ar ICP, and CH4/H2/BCl3/Cl2/Ar ICP. The CH4/H2/BCl3/Cl2/Ar etched structures yielded more than 2.5 times improvement in dark current density and nearvertical sidewalls. Using this etching technique, we then implement a 1k x 1k p-CBIRD array with 11.5 μm cutoff and peak responsivity of 3 A/W. Operating at T = 80K, the array yielded a 81% fill factor with 98% operability and performance results of 21% quantum efficiency, 53 mK NE▵T, and NEI of 6.9×1013 photons/sec-cm2.
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Jean Nguyen, Cory J. Hill, Don Rafol, Sam Keo, Alexander Soibel, David Z.-Y. Ting, Jason Mumolo, John Liu, Sarath D. Gunapala, "Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451T (24 January 2011); doi: 10.1117/12.875354; https://doi.org/10.1117/12.875354
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