Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode

Naoto Namekata; Shuichiro Inoue

doi:10.1117/12.873232

24 January 2011 Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode

Naoto Namekata, Shuichiro Inoue

Author Affiliations +

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79452K (2011) https://doi.org/10.1117/12.873232
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We report an ultra-low-noise single-photon detection at 1550nm using a 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode. The avalanche photodiode was operated in a low temperature regime ( > 183 K) which can be achieved by a simple electrical cooling system. At 183 K, the dark count probability can be reduced to 2.0×10^-7 with a detection efficiency of 9.6 %, while the afterpulsing probability remained at a low value (3 %).

Citation Download Citation

Naoto Namekata and Shuichiro Inoue "Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79452K (24 January 2011); https://doi.org/10.1117/12.873232

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