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24 January 2011 Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode
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Abstract
We report an ultra-low-noise single-photon detection at 1550nm using a 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode. The avalanche photodiode was operated in a low temperature regime ( > 183 K) which can be achieved by a simple electrical cooling system. At 183 K, the dark count probability can be reduced to 2.0×10-7 with a detection efficiency of 9.6 %, while the afterpulsing probability remained at a low value (3 %).
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Naoto Namekata and Shuichiro Inoue "Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79452K (24 January 2011); https://doi.org/10.1117/12.873232
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