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Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities
Controlled formation of well-aligned GaAs nanowires with high aspect ratio on transparent substrates
GaSb/GaAs quantum dots with type-II band alignments prepared by molecular beam epitaxy for device applications
Size, strain and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 μm emitters