Controlled formation of well-aligned GaAs nanowires with high aspect ratio on transparent substrates

Jiun-Jie Chao; Ching-Fuh Lin

doi:10.1117/12.877502

1 March 2011 Controlled formation of well-aligned GaAs nanowires with high aspect ratio on transparent substrates

Jiun-Jie Chao, Ching-Fuh Lin

Proceedings Volume 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII; 79470F (2011) https://doi.org/10.1117/12.877502
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In this study, we present a facile route to fabricate large-scale arrays of GaAs nanowires (NWs) with high aspect ratio on transparent substrates. It is demonstrated that the monolayer of SiO₂ nanoparticles can be effectively used as etch masks for the inductively coupled plasma (ICP) etching process. To form the monolayer of SiO₂ nanoparticles on the GaAs substrate, the concentration and temperature of the SiO₂ colloidal dispersion solution as well as the interface wetting of the GaAs substrate are investigated. By adjusting the ICP etching conditions, the high-aspect-ratio GaAs NWs with lengths of 4.3μm and cross-sections of 70nm are successfully fabricated. Furthermore, the fabricated GaAs NWs are massively transferred onto the transparent substrate at low temperature. The SEM observation and the X-ray diffraction spectrum reveal that the transferred GaAs NWs have vertically aligned morphology and good crystal property.

Citation Download Citation

Jiun-Jie Chao and Ching-Fuh Lin "Controlled formation of well-aligned GaAs nanowires with high aspect ratio on transparent substrates", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470F (1 March 2011); https://doi.org/10.1117/12.877502

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