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1 March 2011 Positioned growth of InP nanowires
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Abstract
We describe two different approaches to growing precisely positioned InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy, one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. Growth is performed on InP wafers which are first coated with 20 nm of SiO2. These are then patterned using e-beam lithography to create nanometer scale holes in the SiO2 layer to expose the InP surface. For the VLS growth Au is then deposited into the holes in the SiO2 mask layer using a self-aligned lift-off process. For the catalyst-free growth no Au is deposited. In both cases the deposition of InP results in the formation of InP nanowires. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO2 mask. The orientation of the nanowires is also different, <111>B when using Au particles and <111>A when catalyst-free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAs quantum dots grown inside the nanowire.
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P. J. Poole, D. Dalacu, J. Lapointe, A. Kam, and K. Mnaymneh "Positioned growth of InP nanowires", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470K (1 March 2011); https://doi.org/10.1117/12.876196
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