1 March 2011 GaSb/GaAs quantum dots with type-II band alignments prepared by molecular beam epitaxy for device applications
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Abstract
The growth procedures and device applications of GaSb/GaAs quantum dots (QDs) are investigated in this report. The influence of As flux on the GaSb QD morphologies and optical characteristics has revealed the importance of precise Sb/As flux control during Sb post-soaking procedures after GaSb deposition. With optimized GaSb QD growth conditions and long-term Sb post soaking procedure, room-temperature operation light-emitting diodes (LEDs) and high-temperature operation quantum-dot infrared photodetectors (QDIPs) are demonstrated. The results have revealed the possibilities of type-II GaSb QDs in the applications of optical devices.
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Shih-Yen Lin, Shih-Yen Lin, Wei-Hsun Lin, Wei-Hsun Lin, Chi-Che Tseng, Chi-Che Tseng, Shu-Han Chen, Shu-Han Chen, } "GaSb/GaAs quantum dots with type-II band alignments prepared by molecular beam epitaxy for device applications", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470M (1 March 2011); doi: 10.1117/12.873657; https://doi.org/10.1117/12.873657
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