1 March 2011 Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction
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Abstract
Based on atomistic analysis and kinematic diffraction theory, it has been previously predicted that quantum dot heights can be extracted from RHEED intensity profiles along the chevron tails (Feltrin A. and Freundlich A, J. Cryst. Growth 301-302, 38-41-2007). Here we report the existence of such periodic RHEED intensity fringes and demonstrate experimentally the possibility of monitoring real time the evolution of the average dot-size in the archetype InAs/GaAs system. The methodology when combined with RHEED information on the dot surface coverage and facet orientation is shown to provide a full metrology of self assembled quantum dots and could be valuable in assessing the QD growth kinetics and improving process reproducibility.
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Alexandre Freundlich, Alexandre Freundlich, Chandani Rajapaksha, Chandani Rajapaksha, } "Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470P (1 March 2011); doi: 10.1117/12.875811; https://doi.org/10.1117/12.875811
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