11 February 2011 Atomic tailoring of Eu-centers in thinfilms for spectral storage applications
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The doping of Eu into MgS as well as CaS:Eu thinfilms, produced by Chemically Controlled Pulsed Laser Deposition (CCPLD), offer a lot of potential for the development of ultra-high density; (Terabits per sq. in.) spectral storage devices. These storage capacities are made possible by the use of spectral holeburning technique where many spectral holes can be burned into the inhomogeneously broadened Zero Phonon Line (ZPL) of 4f-5d electronic transition of the Eu ions inside the MgS and CaS lattice. It is shown that one can tailor different optical centers by introducing trace amounts of impurities in the alkaline earth sulfide lattice, especially if these impurities occupy sites close to the europium ion. The effect of doping on MgS and CaS thinfilms with oxygen impurity has been presented. Laser excited fluorescence results have been presented that demonstrate possible atomic tailoring of calcium and magnesium sulfides in creating new oxygen associated europium centers. Such centers are of prime importance in increasing the spectral storage capacity of multilayer thinfilm structures based on these materials.
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F. Bezares, F. Bezares, M. F. Aly, M. F. Aly, Zameer Hasan, Zameer Hasan, } "Atomic tailoring of Eu-centers in thinfilms for spectral storage applications", Proc. SPIE 7948, Advances in Photonics of Quantum Computing, Memory, and Communication IV, 794808 (11 February 2011); doi: 10.1117/12.879166; https://doi.org/10.1117/12.879166

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