Cross-Talk And Transit-Time Effects In Stroboscopic Voltage Measurements Via Electron Emission

R. Clauberg; A. Blacha; H. Beha

doi:10.1117/12.940944

2 February 1988 Cross-Talk And Transit-Time Effects In Stroboscopic Voltage Measurements Via Electron Emission

R. Clauberg, A. Blacha, H. Beha

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940944
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The dependence on geometry, extraction field, electron start energy, and rise time of the input signal is investigated for the transit-time and cross-talk effects in stroboscopic voltage measurements via electron emission. The investigation yields information about the best achievable time resolution and the disturbance of measured signals by signals on neighboring conductors in corresponding contactless voltage-measuring techniques like photoemission sampling and electron-beam sampling.

Citation Download Citation

R. Clauberg, A. Blacha, and H. Beha "Cross-Talk And Transit-Time Effects In Stroboscopic Voltage Measurements Via Electron Emission", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940944

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