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2 February 1988 Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940928
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Preparation of lattice matched InP/InGaAs(P) heterojunctions was first reported by Antypas et all in 1972. Initially research efforts were mainly concentrated on optical devices. In recent years three-terminal InP/InGaAs(P) heterojunction bipolar transistors (HBT's), for microwave and digital applications, have gained more interest. Several laboratories have reported HBT's fabricated by LPE techniques but these were not optimised. More recently devices grown by MBE and CBE have been demonstrated in the InP/ InGaAs system. This paper is concerned with discussing the intrinsic advantages to be gained by fabricating HBT's in this material system and progress attained to date is reviewed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Schuitemaker, P. A. Houston, and P. N. Robson "Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940928
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