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2 February 1988 Simple And Inexpensive Method For Testing High Speed Semiconductor Devices Using Electro-Optics Sampling
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940956
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A new method of semiconductor device testing is described which enables the use of electro-optic sampling for routine semiconductor device measurements. The technique is well suited for testing of discrete devices in die form. Pulse risetimes less than 4 picoseconds, corresponding to frequencies well over 100 GHz, are generated and measured, with sensitivities of a few millivolts.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. W. Forsyth, R. S. Jones, and J. R. Lindemuth "Simple And Inexpensive Method For Testing High Speed Semiconductor Devices Using Electro-Optics Sampling", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940956
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